ALD

Atomic Layer Deposition (ALD) is one of promising technologies to provide ultrathin uniform thin films.
The adsorption of the precursor, the purge, the reaction with the Reactant, and the purge are in one cycle, and the thickness can be controlled finely by adjusting the number of cycles.
Unlike typical CVD, it is characterized by the surface reaction rather than the gas phase reaction. This self-limiting reaction allows for deposition in atomic layers, and uniformity and Step Coverage are also excellent.